情色空间

Bistable superlattice switching in a quantum spin Hall insulator

We report the observation of bistable superlattice switching in monolayer TaIrTe₄, a dual quantum spin Hall insulator. Switching occurs between two lattice configurations with sharply contrasting periodicities. In particular, in a pristine monolayer, we observe the spontaneous emergence of a long-period superlattice that can be programmed on and off in a non-volatile manner by electrostatic tuning of low-energy electronic states. This switching toggles the system between two structural configurations with unit cell areas differing by two orders of magnitude. Mechanistically, our results reveal two independent and distinct instabilities, one in the lattice and the other in the quantum spin Hall electrons. These instabilities are coupled, leading to electrostatic control of lattice configurations with non-volatile memory. This finding is enabled by combining linear and nonlinear transport measurements, Raman spectroscopy and scanning tunnelling microscopy, which probe complementary aspects of the underlying orders. Notably, this non-volatile memory stabilizes a spontaneous superlattice with a periodicity on the few-nanometre scale that remains robust across a wide doping range, persists over days and survives above 70鈥塊. Our preliminary data also show the emergence of new insulating states at fractional superlattice fillings, which can be switched on and off together with the superlattice.

A new monolayer and dual quantum spin Hall听

We report a dual QSH insulator within a new monolayer crystal of TaIrTe₄, arising from the interplay of its single-particle topology and density-tuned electron correlations. At charge neutrality, monolayer TaIrTe₄听demonstrates the QSH insulator, manifesting enhanced nonlocal transport and quantized helical edge conductance. After introducing electrons from charge neutrality, TaIrTe₄听shows metallic behaviour in only听a small range of charge densities but quickly goes into a new insulating state, entirely unexpected on the basis of the single-particle band structure of TaIrTe₄. This insulating state could arise from a strong electronic instability near the van Hove singularities, probably leading to a charge density wave (CDW). Remarkably, within this correlated insulating gap, we observe a resurgence of the QSH state. The observation of helical edge conduction in a CDW gap could bridge spin physics and charge orders. The discovery of a dual QSH insulator introduces a new method for creating topological flat minibands through CDW superlattices, which offer a promising platform for exploring time-reversal-symmetric fractional phases and electromagnetism.

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Moir茅 synaptic transistor听

We report the experimental realization and room-temperature operation of a low-power (20鈥塸W) moir茅 synaptic transistor based on an asymmetric bilayer graphene/hexagonal boron nitride moir茅 heterostructure. The asymmetric moir茅 potential gives rise to robust electronic ratchet states, which enable hysteretic, non-volatile injection of charge carriers that control the conductance of the device. The asymmetric gating in dual-gated moir茅 heterostructures realizes diverse biorealistic neuromorphic functionalities, such as reconfigurable synaptic responses, spatiotemporal-based tempotrons and Bienenstock鈥揅ooper鈥揗unro input-specific adaptation. In this manner, the moir茅 synaptic transistor enables efficient compute-in-memory designs and edge hardware accelerators for artificial intelligence and machine learning.

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Quantum metric nonlinear Hall effect

Quantum geometry in condensed-matter physics has two components: the real part quantum metric and the imaginary part Berry curvature. Whereas the effects of Berry curvature have been observed through phenomena such as the quantum Hall effect in two-dimensional electron gases and the anomalous Hall effect (AHE) in ferromagnets, the quantum metric has rarely been explored. Here, we report a nonlinear Hall effect induced by the quantum metric dipole by interfacing even-layered MnBi₂Te₄ with black phosphorus. The quantum metric nonlinear Hall effect switches direction upon reversing the antiferromagnetic (AFM) spins and exhibits distinct scaling that is independent of the scattering time. Our results open the door to discovering quantum metric responses predicted theoretically and pave the way for applications that bridge nonlinear electronics with AFM spintronics.